| 1. | Rohms chip japan , high - speed switching , reverse recovery time 2 4ns
晶片精制，高速切换，逆向回 |
| 2. | Reverse recovery time
反向恢复时间 |
| 3. | However , at turn - off , the diode current reverse for a reverse recovery time trr before falling to zero
然而在关断时，二极管的电流在降至零之前有一个反向恢复时间。 |
| 4. | The inefficient and powerless incentive leads to inefficient reverse recovery of the automobile
由于对用户的激励缺乏效度和力度，直接导致废旧汽车的回收率不高，逆向回收系统效率低下。 |
| 5. | Electronic irradiation , is widely use in manufacture of semiconductor products . in order to reduce reverse recovery time , we determined to adopt it
电子辐照技术,广泛应用于半导体器件的制造中,本课题用来进一步降低反向恢复时间。 |
| 6. | In order to eliminate the voltage oscillation caused by the reverse recovery of the rectifier diodes , a resonant inductance and two clamping diodes can be introduced to the primary side
为了消除输出整流管的电压尖峰，可以在原边加入一个谐振电感和两个箝位二极管。 |
| 7. | After simulating the reverse recovery characteristics , the forward and backward i - v characteristics , carries distribution and current vectors et al by medici , the optimal design to some key parameters is proposed
同时对器件反向恢复特性、正反向-特性及载流子分布、电流矢量等物理量进行了模拟和详细的机理分析。 |
| 8. | After simulating the reverse recovery voltage and current characteristics , the forward and backward i - v characteristics and temperature characteristics with medici , the optimal design to some key parameters is proposed
在利用medici对它们的反向恢复、 -特性和温度特性等进行模拟后及分析后，又给出?基区渐变掺杂厚度、方式以及台面模型等参数的优化设计过程。 |
| 9. | A lot of works has been done to reduce the reverse recovery time and improve the general performance in the international power devices ’ research field . they focus on the design of device structure and lifetime controlling technologies
围绕着如何减下frd的反向恢复时间、提高综合性能,国际功率半导体器件领域进行了广泛的探讨,热点集中在了器件结构设计和寿命控制等技术上,其中又以寿命控制技术为为主要焦点。 |
| 10. | With the high frequency trend of power electronic technique development , the switching power diodes must be conducted and turn off very fast , that is , the diodes should have short reverse recovery time , low peak reverse current and soft recovery characteristics
电力电子技术高频化的发展趋势要求功率开关二极管必须具有快速开通和高速关断的能力，即具有短的反向恢复时间( t _ ( rr ) ) ，较小的反向恢复电流( i _ ( rm ) )和软恢复特性。 |
